IRF3205 MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known.
- It has advanced process technology
- Ultra-low on-resistance
- Dynamic DV/DT rating
- Gate to source voltage is ±20V
- On-Resistance Rds(on) of 8mohm at Vgs of 10V
- Fast switching and fully avalanche rated
- Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.
1 x IRF3205 MOSFET 55V 110A N-Channel HEXFET Power MOSFET TO-220 Package.
|Continuous Drain Current||
|No. of Channels||
|Operating Temperature Range||
-55°C to 175°C
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