SED3080M N-Channel 30V 80A Power MOSFET DFN 3x3

The SED3080M is a high-performance N-channel enhancement-mode MOSFET engineered for high-density power management and switching applications. Housed in a compact 3x3mm DFN package, this field-effect tube delivers an impressive 80A of continuous drain current with a 30V breakdown voltage. It utilizes advanced TrenchFET technology to achieve exceptionally low on-resistance (RDS(on)), significantly reducing conduction losses in DC/DC converters, load switches, and battery protection circuits. With a power dissipation rating of 83W and a thermally efficient bottom-side cooling pad, the SED3080M is an ideal choice for space-constrained designs that require high reliability and high-speed switching performance in consumer and industrial electronics.

Features:

• High Current Handling: Supports up to 80A continuous current, perfect for high-power gantry and motor drives.
• Ultra-Low RDS(on): Optimized for efficiency with typical resistance as low as 4.5mΩ.
• Thermally Enhanced Package: DFN 3x3 footprint with exposed pad for superior heat dissipation (83W rating).
• Logic Level Compatible: Low gate threshold voltage allows for direct control via 3.3V or 5V logic.
• Fast Switching Speeds: Designed to minimize switching losses in high-frequency power supplies.
• Subminiature Footprint: Saves critical PCB space in mobile and handheld devices.

Package Includes:

1 x SED3080M N-Channel 30V 80A Power MOSFET DFN 3x3